Barrier Heights of Antimony / and Bismuth / P -Silcon (100) Junctions

A. A. OBERAFO
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Abstract


Junctions were fabricated in vacuum of about 10-5 Torr by thermal evaporation of Sb or Bi onto chemically etched p-type silicon (100) substrates. The electrical properties were studied by current voltage (I-V) measurements. Some of the Sb and Bi junctions were heated-treated for \frac{1}{2} hr at 200 and 150oC, respectively. The barrier height (BH) was equal to 0.64 eV for both as-deposited and heat-treated Sb junctions, while it was 0.56 and 0.74 eV for as-deposited and heat-treated Bi Junctions, respectively. These observatimons indicate that for Sb junctions, annealing at a temperature of 200oC resulted only in partial elimination of any interfacial layer (oxide), while it modified the density of interface states. On the other hand, for Bi junctions, heat-treatment at 150oC eliminates completely the oxide layer, while also modifying the density of interface states.

Keywords


Turk. J. Phys., 24, (2000), 715-724. Full text: pdf Other articles published in the same issue: Turk. J. Phys.,vol.24,iss.6.

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